ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

Y. F. Chan; X. F. Duan; S. K. Chan; I. K. Sou; X. X. Zhang; N. Wang

doi:10.1063/1.1615293

ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

Y. F. Chan, X. F. Duan, S. K. Chan, I. K. Sou, X. X. Zhang, N. Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

The molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.

Original language	English (US)
Pages (from-to)	2665-2667
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1615293
State	Published - Sep 29 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1615293

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title = "ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy",

abstract = "The molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.",

author = "Chan, {Y. F.} and Duan, {X. F.} and Chan, {S. K.} and Sou, {I. K.} and Zhang, {X. X.} and N. Wang",

year = "2003",

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doi = "10.1063/1.1615293",

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AU - Chan, Y. F.

AU - Duan, X. F.

AU - Chan, S. K.

AU - Sou, I. K.

AU - Zhang, X. X.

AU - Wang, N.

PY - 2003/9/29

Y1 - 2003/9/29

N2 - The molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.

AB - The molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters on GaP(111) substrates was reported. It was shown that the growth process was based on the Au-catalyzed vapor-liquid-solid deposition. Along the (111) plane, the dominant defects were found to be twins at the interface between the substrate and the nanowires.

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U2 - 10.1063/1.1615293

DO - 10.1063/1.1615293

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

Abstract

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