Abstract
We have fabricated ZnSe/ZnS quantum wires by MOCVD and electron-beam lithography with wire width ranging between 27 and 100 nm. High emission efficiency around 3 eV is demonstrated. The concomitant occurrence of lateral quantization and inhomogeneous strain is discussed.
Original language | English (US) |
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Pages (from-to) | 199-204 |
Number of pages | 6 |
Journal | Physics of Low-Dimensional Structures |
Volume | 1998 |
Issue number | 1-2 |
State | Published - 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)